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【Reprint】Complementary Measurement Techniques for Trace Metal Contamination on Silicon Wafer Surfaces
The semiconductor industry has high requirements for product quality and cleanliness of the production environment. Metal contamination is harmful to chips, so metal contamination on silicon wafers should be avoided. The purpose of this study is to exchange experience in solving the problem of metal contamination on the surface of silicon wafers, and to introduce how to use complementary measurement techniques to detect trace metal contamination on the wafer surface and find out the root cause of the problem, Explain the difficulty of selecting a suitable method from among multiple detection methods, and explore the dependence of lifetime measurement techniques on heat treatment. This article aims to address contamination on the surface of silicon substrates and three different examples of metal contamination will be discussed. The first is Ni diffusion, such a fast-diffusing species, which is a metal contamination that diffuses from a spot on the edge of the wafer. The...
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